SOCAY P0720SB 4KV Thyristor Surge Protection Devices 150A 65V SMD Thyristor

2500PCS
MOQ
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SOCAY P0720SB 4KV Thyristor Surge Protection Devices 150A 65V SMD Thyristor
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Features
Specifications
Item: Thyristor Surge Suppressors (TSS)
Package Size: DO-214AA/SMB
VDRM (Min.): 65V
IDRM: 5μA
Vs @100V/μS (Max.): 88V
Is (Max.): 800mA
Vt @It=2.2A (Max.): 4V
It (Max.): 2.2A
Ih (Min.): 150mA
C0 @1MHz,2V Bias (Typ.): 75pF
Highlight:

P0720SB Thyristor Surge Protection Devices

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Thyristor Surge Protection Devices 150A

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65V SMD Thyristor

Basic Infomation
Place of Origin: Shenzhen, Guangdong, China
Brand Name: SOCAY
Certification: REACH,RoHS,ISO
Model Number: P0720SB
Payment & Shipping Terms
Packaging Details: tape reel,bulk
Delivery Time: 5-8 work days
Product Description

SOCAY P0720SB 4KV Thyristor Surge Suppressors Protection Devices 150A 65V SMD Thyristor

 

DATASHEET:  PXXX0SB_v2103.1.pdf

 

Part Number Marking VDRM @IDRM=5μA

VS

@100V/μS

VT @IT=2.2A IS IT IH

C0 ②

@1MHz, 2V bias

    V min V max V max mA max A max mA min pF typ
P0080SB P008B 6 25 4 800 2.2 50 80
P0300SB P03B 25 40 4 800 2.2 50 80
P0640SB P06B 58 77 4 800 2.2 150 80
P0720SB P07B 65 88 4 800 2.2 150 75
P0900SB P09B 75 98 4 800 2.2 150 70
P1100SB P11B 90 130 4 800 2.2 150 70
P1300SB P13B 120 160 4 800 2.2 150 65
P1500SB P15B 140 180 4 800 2.2 150 65
P1800SB P18B 170 220 4 800 2.2 150 65
P2300SB P23B 190 260 4 800 2.2 150 60
P2600SB P26B 220 300 4 800 2.2 150 60
P3100SB P31B 275 350 4 800 2.2 150 50
P3500SB P35B 320 400 4 800 2.2 150 50
P4200SB P42B 400 520 4 800 2.2 150 40

Notes:

① Vs is measured at 100KV/s.

② Off-state capacitance is measured in VDC=2V, VRMS=1V, f=1MHz.

 

SOCAY P0720SB 4KV Thyristor Surge Protection Devices 150A 65V SMD Thyristor 0

Description:

PXXX0SB Series are designed to protect broadband equipment such as modems, line card, CPE and DSL from damaging over-voltage transients.The series provides a surface mount solution that enables equipment to comply with global regulatory standards.

 

Advantages of semiconductor discharge tubes:

1. Before breakdown, it is equivalent to an open circuit, the insulation resistance is very large, and the leakage current is very small;

2. It has two-way symmetry characteristics;

3. The response speed is very ns level;

4. The breakdown voltage has good consistency.

Disadvantages of semiconductor discharge tubes:

1. Compared with ceramic discharge tubes, the flow rate is smaller, only a few hundred A;

2. The breakdown voltage has only certain specific values;

3. The capacitance is large, ranging from tens to hundreds of pF.

 

Disadvantages of semiconductor discharge tubes:

1. Compared with ceramic discharge tubes, the flow rate is smaller, only a few hundred A;

2. The breakdown voltage has only certain specific values;

3. The capacitance is large, ranging from tens to hundreds of pF.

Parameter Definition
IS Switching Current - maximum current required to switch to on state
IDRM Leakage Current - maximum peak off-state current measured at VDRM
IH Holding Current - minimum current required to maintain on state
IT On-state Current - maximum rated continuous on-state current
VS Switching Voltage - maximum voltage prior to switching to on stat
VDRM Peak Off-state Voltage - maximum voltage that can be applied while maintaining off state
VT On-state Voltage - maximum voltage measured at rated on-state current
C0 Off-state Capacitance - typical capacitance measured in off state

 

 

Series 2/10μS1 8/20μS1 10/160μS1 10/560μS1 10/1000μS1 5/310μS1

ITSM

50/60 Hz

di/dt
  2/10μS2 1.2/50μS2 10/160μS2 10/560μS2 10/1000μS2 10/700μS2    
  A min A min A min A min A min A min A min Amps/µs max
B 250 250 150 100 80 100 30 500

 

Notes:

  • Current waveform in µs
  • Voltage waveform in µs

 

 

 

 

 

- Peak pulse current rating (IPP) is repetitive and guaranteed for the life of the product.

- IPP ratings applicable over temperature range of -40ºC to +85ºC

- The device must initially be in thermal equilibrium with -40°C < TJ < +150°C

 

 

 

 

 

 

 

 

High Temp Voltage Blocking 80% Rated VDRM (VAC Peak ) +125°C or +150°C, Lead Material Copper Alloy High Temp Voltage Blocking 504 or 1008 hrs. MIL-STD-750 (Method 1040) JEDEC, JESD22-A-101  
     
Temp Cycling -65°C to +150°C, 15 min. dwell, 10 up to 100 cycles. MIL-STD-750 (Method 1051) EIA/JEDEC, JESD22-A104  
     
Biased Temp & Humidity 52 VDC (+85°C) 85%RH, 504 up to 1008 hrs. EIA/ JEDEC, JESD22-A-101  
High Temp Storage +150°C 1008 hrs. MIL-STD-750 (Method 1031) JEDEC, JESD22-A-101  
Low Temp Storage -65°C, 1008 hrs.  
Thermal Shock 0°C to +100°C, 5 min. dwell, 10 sec. transfer, Thermal Shock 10 cycles. MIL-STD-750 (Method 1056) JEDEC, JESD22-A-106  
Autoclave (Pressure Cooker Test) +121°C, 100%RH, 2atm, 24 up to 168 hrs. EIA/Cooker Test) JEDEC, JESD22-A-102  
Resistance to Solder Heat +260°C, 30 secs. MIL-STD-750 (Method 2031  
Moisture Sensitivity Level 85%RH, +85°C, 168 hrs., 3 reflow cycles Level (+260°C Peak). JEDEC-J-STD-020, Level 1  

 

Lead Material Copper Alloy  
Terminal Finish 100% Matte-Tin Plated  
Body Material UL recognized epoxy meeting flammability classification 94V-0  

 

 

Part Number Component Package Quantity Packaging Option Packaging Specification  
Pxxx0SB DO-214AA 2500 Tape & Reel -12mm/13″tape EIA -481 - D  

 

 

 

 

SOCAY P0720SB 4KV Thyristor Surge Protection Devices 150A 65V SMD Thyristor 1

SOCAY P0720SB 4KV Thyristor Surge Protection Devices 150A 65V SMD Thyristor 2

SOCAY P0720SB 4KV Thyristor Surge Protection Devices 150A 65V SMD Thyristor 3

SOCAY P0720SB 4KV Thyristor Surge Protection Devices 150A 65V SMD Thyristor 4
​Product features
Excellent capability of absorbing transient surge
Quick response to surge voltage
Eliminates over voltage caused by fast rising transients
Solid-state silicon technology, non degenera
Application 
Audio/Video line
Network and telecom
Data lines and security systems
Serial ports

 

About SOCAY

we are manufacturer and supplier of NTC ,DIODES ect passive components more than 20 years from China .if you have any request please contact us freely .

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