Name: SE03N6S01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V IR Maximum 0.5μA
Brand: SOCAY
SKU: SE03N6S01GZ
Rating: 5 (124 reviews)

SE03N6S01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V IR Maximum 0.5μA

10000PCS

MOQ

Negotiable

Price

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Features

Specifications

Component Name: ESD Arrays

Component Package: DFN1006-2L

Vrwm (Max.): 3.3V

Vbr (Min.): 5.0V

Vbr (Max.): 5.0V

It: 1mA

Ir (Max.): 0.5μA

Vc (Typ.) (Ipp=1A): 6.0V

Vc (Typ.) (Ipp=5A): 10.0V

Cesd: 12pF

Highlight:

SE03N6S01GZ ESD Array

3.3V ESD Array

Low Capacitance ESD Array

Basic Infomation

Place of Origin: Shenzhen Guangdong China

Brand Name: SOCAY

Certification: REACH RoHS ISO

Model Number: SE03N6S01GZ

Document: Product Brochure PDF

Payment & Shipping Terms

Delivery Time: 5-8 work days

Gallery

SE03N6S01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V IR Maximum 0.5μA

Product Description

Low Capacitance ESD Arrays for ESD Protection SE03N6L01GZ Operating Voltage 3.3V

ESD Arrays Features:

Operating Voltage: 3.3V
Low Leakage: nA Level
Low Capacitance
Extremely-Low Clamping Voltage
RoHS compliant

ESD Arrays Applications:

Cellular Handsets & Accessories
Digital Visual Interface (DVI)
RF Circuits
Display Port
USB Ports
MDDI Ports
PCI Express

ESD Arrays Mechanical Characteristics:

DFN1006 (1.0x0.6x0.5mm) Package
Weight 0.5 Milligrams (Approximate)
Quantity Per Reel : 10,000pcs
Reel Size : 7 inch
Lead Finish : Lead Free

ESD Arrays Functional Diagram:

SE03N6S01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V IR Maximum 0.5μA 0

ESD Arrays Absolute Maximum Ratings (T_A=25℃ unless otherwise specified):


Symbol	Parameter	Value	Units
T_L	Lead Soldering Temperature	260 (10sec)	ºC
T_OP	Operating Temperature Range	-55 to +125	℃
T_STG	Storage Temperature Range	-55 to +150	℃
V_ESD	ESD per IEC61000-4-2 (Air)	±25	kV
	ESD per IEC61000-4-2 (Contact)	±25

Electrical Characteristics (T_A= 25℃ unless otherwise specified):

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Reverse Working Voltage	VRWM	--	--	--	3.3	V
Breakdown Voltage	VBR	IT = 1mA	3.5	5.1	5.0	V
Leakage Current	IR	VRWM = 3.3V	--	--	0.5	μA
Clamping Voltage	VC	IPP = 1A ,tP = 8/20μs	--	6.0	--	V
Clamping Voltage	VC	IPP = 5A , tP = 8/20μs	--	10.0	--	V
Junction Capacitance	CJ	VR = 0V, f = 1MHz	--	0.5	--	pF

DFN1006-2L Package Outline & Dimensions:

Symbol	Millimeters		Inches
	Min.	Max.	Min.	Max.
A	0.450	0.550	0.018	0.022
A1	0.010	0.070	0.000	0.003
D	0.950	1.050	0.037	0.041
E	0.550	0.650	0.022	0.026
D1	0.450 REF		0.018 REF
E1	0.400 REF		0.016 REF
b	0.275	0.325	0.011	0.013
e	0.675	0.725	0.027	0.029
L	0.275	0.325	0.011	0.013
L1	0.010 REF		0.000 REF

SE03N6S01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V IR Maximum 0.5μA 1

Tag:

ESD Protection Diode

ESD Surge Protection

TVS Diode For ESD Protection

Contact Person :

Sun

Tel :

+8618126201429

Fax :

86-755-88362681

SE03N6S01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V IR Maximum 0.5μA

SE03N6S01GZ ESD Array

3.3V ESD Array

Low Capacitance ESD Array

ESD Protection Diode

ESD Surge Protection

TVS Diode For ESD Protection

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