Name: SE03N6L01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V
Brand: SOCAY
SKU: SE03N6L01GZ
Rating: 5 (148 reviews)

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Features

Specifications

Component Name: ESD Arrays

Component Package: DFN1006-2L

Vrwm (Max.): 3.3V

Vbr (Min.): 5.0V

Vbr (Max.): 6.5V

It: 1mA

Ir (Max.): 1.0μA

Vc (Typ.) (Ipp=1A): 9.0V

Vc (Typ.) (Ipp=5A): 19.0V

Cj (Typ.): 0.4pF

Highlight:

ESD Array 3.3V

Low Capacitance ESD Array

Low Capacitance ESD Protection

Basic Infomation

Place of Origin: Shenzhen Guangdong China

Brand Name: SOCAY

Certification: REACH RoHS ISO

Model Number: SE03N6L01GZ

Document: Product Brochure PDF

Payment & Shipping Terms

Delivery Time: 5-8 work days

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SE03N6L01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V

Product Description

Low Capacitance ESD Arrays for ESD Protection SE03N6L01GZ Operating Voltage 3.3V

ESD Arrays DATASHEET: SE03N6L01GZ_v2204.1.pdf

ESD Arrays Features:

Operating Voltage: 3.3V
Low Leakage: nA Level
Low Capacitance
Extremely-Low Clamping Voltage
RoHS compliant

ESD Arrays Applications:

Cellular Handsets & Accessories
Digital Visual Interface (DVI)
RF Circuits
Display Port
USB Ports
MDDI Ports
PCI Express

ESD Arrays Mechanical Characteristics:

DFN1006 (1.0x0.6x0.5mm) Package
Weight 0.5 Milligrams (Approximate)
Quantity Per Reel : 10,000pcs
Reel Size : 7 inch
Lead Finish : Lead Free

ESD Arrays Functional Diagram:

SE03N6L01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V 0

ESD Arrays Absolute Maximum Ratings (T_A=25℃ unless otherwise specified):


Symbol	Parameter	Value	Units
T_L	Lead Soldering Temperature	260 (10sec)	ºC
T_OP	Operating Temperature Range	-55 to +125	℃
T_STG	Storage Temperature Range	-55 to +150	℃
V_ESD	ESD per IEC61000-4-2 (Air)	±25	kV
	ESD per IEC61000-4-2 (Contact)	±25

Electrical Characteristics (T_A= 25℃ unless otherwise specified):

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Reverse Working Voltage	VRWM	--	--	--	3.3	V
Breakdown Voltage	VBR	IT = 1mA	5.0	--	6.5	V
Leakage Current	IR	VRWM = 3.3V	--	--	1.0	μA
Clamping Voltage	VC	IPP = 1A ,tP = 8/20μs	--	9.0	--	V
Clamping Voltage	VC	IPP = 5A , tP = 8/20μs	--	19.0	--	V
Junction Capacitance	CJ	VR = 0V, f = 1MHz	--	0.4	--	pF

ESD Arrays Characteristic Curves:

Fig1. 8/20 us Pulse Waveform

Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)

DFN1006-2L Package Outline & Dimensions:

Symbol	Millimeters		Inches
	Min.	Max.	Min.	Max.
A	0.450	0.550	0.018	0.022
A1	0.010	0.070	0.000	0.003
D	0.950	1.050	0.037	0.041
E	0.550	0.650	0.022	0.026
D1	0.450 REF		0.018 REF
E1	0.400 REF		0.016 REF
b	0.275	0.325	0.011	0.013
e	0.675	0.725	0.027	0.029
L	0.275	0.325	0.011	0.013
L1	0.010 REF		0.000 REF

Contact Person :	Sun
Tel :	+8618126201429
Fax :	86-755-88362681

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